_a-low-area-overhead-nbti-pbti-sensor-for-sram-memories-myprojectbazaar.jpg "A Low Area Overhead NBTI PBTI Sensor for SRAM Memories - MyprojectBazaar from bias temperature instability Video Screenshot Preview")
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⏲ Duration: 3 min 99 sec
✓ Published: 21-Jun-2019
✓ Published: 21-Jun-2019
Description:
Bias temperature instability (BTI) is known as one serious reliability concern in nanoscale technologies. BTI gradually increases the absolute value of threshold voltage (Vth) of MOS transistors. The main consequence of Vth shift of the SRAM cell transistors is the static noise margin (SNM) degradation. The SNM degradation of SRAM cells results in bit-flip occurrences due to transient faults and should be monitored accurately. This paper proposes a sensor called write current-based BTI sensor (W
Bias temperature instability (BTI) is known as one serious reliability concern in nanoscale technologies. BTI gradually increases the absolute value of threshold voltage (Vth) of MOS transistors. The main consequence of Vth shift of the SRAM cell transistors is the static noise margin (SNM) degradation. The SNM degradation of SRAM cells results in bit-flip occurrences due to transient faults and should be monitored accurately. This paper proposes a sensor called write current-based BTI sensor (W
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